symbol 10 sec steady state v ds v gs 13.5 10 10.8 8 i dm i ar e ar 3.1 1.7 2.0 1.1 t j , t stg parameter symbol typ max t 10s 31 40 steady state 59 75 steady state r q jl 16 24 w 20 c/w r q ja c -55 to 150 absolute maximum ratings t j =25c unless otherwise noted p d maximum junction-to-lead c c/w thermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a units parameter t a =25c t a =70c vv i d gate-source voltage drain-source voltage 40 power dissipation a t a =25c junction and storage temperature range t a =70c repetitive avalanche energy l=0.3mh g mj 120 a 23 79 pulsed drain current b avalanche current g continuous drain current a AO4484 40v n-channel mosfet product summary v ds (v) = 40v i d = 10a (v gs = 10v) r ds(on) < 10m (v gs = 10v) r ds(on) < 12m (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4484 uses advanced trench technology to provide excellent r ds(on) with low gate charge. this is an all purpose device that is suitable for use in a wide range of power conversion applications. soic-8 top view bottom view d d d d s s s g g ds alpha & omega semiconductor, ltd. www.aosmd.com
AO4484 symbol min typ max units bv dss 40 v 1 t j = 55c 5 i gss 100 na v gs(th) 1.7 2.2 3 v i d(on) 120 a 8.2 10 t j =125c 12.5 16 10 12.5 g fs 75 s v sd 0.72 1 v i s 2.5 a c iss 1500 1950 pf c oss 215 pf c rss 135 pf r g 2 3.5 5 w q g (10v) 27.2 37 nc q g (4.5v) 13.6 18 nc q gs 4.5 nc q gd 6.4 nc t d(on) 6.4 ns t r 17.2 ns t d(off) 29.6 ns t f 16.8 ns t rr 30 40 ns q rr 19 nc 0 this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. switching parameters dynamic parameters maximum body-diode continuous current total gate charge v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =20v, f=1mhz input capacitance gate source charge gate drain charge m a total gate charge v gs =10v, v ds =20v, i d =10a output capacitance i s = 1a,v gs = 0v v ds = 5v, i d = 10a forward transconductance gate resistance turn-off delaytime v gs =10v, v ds =20v, r l = 2 w , r gen =3 w turn-off fall time turn-on delaytime turn-on rise time m w gate threshold voltage v ds = v gs i d = 250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss r ds(on) drain-source breakdown voltage body diode reverse recovery time body diode reverse recovery charge i f =10a, di/dt=100a/ m s v gs = 10v, i d = 10a reverse transfer capacitance i f =10a, di/dt=100a/ m s static drain-source on-resistance diode forward voltage v gs = 4.5v, i d = 8a on state drain current i d = 250 m a, v gs = 0v v gs = 10v, v ds = 5v v ds = 40v, v gs = 0v v ds = 0v, v gs = 20v zero gate voltage drain current gate-body leakage current a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a = 25c. the value in any given application depends on the user 's specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using t 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. rev1: nov. 2010 alpha omega semiconductor, ltd. www.aosmd.com
AO4484 typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 20 40 60 80 100 120 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 4v 4.5v 10v 3.5v 0 20 40 60 80 100 2 2.5 3 3.5 4 4.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds = 5v 4 6 8 10 12 14 16 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) v gs = 10v v gs = 4.5v 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 5 10 15 20 25 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) i d = 10a 25c 125c v gs = 3v v gs = 10v i d = 10a v gs = 4.5v i d =8a alpha omega semiconductor, ltd. www.aosmd.com
AO4484 typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 5 10 15 20 25 30 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 500 1000 1500 2000 2500 0 10 20 30 40 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 0.0001 0.01 1 100 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance(note e) z q qq q ja normalized transient thermal resistance 0.01 0.1 1 10 100 1000 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 1m 100ms 10s 10 m s dc v ds = 20v i d = 10a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =75c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha omega semiconductor, ltd. www.aosmd.com
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